{"id":268,"date":"2026-02-01T12:27:59","date_gmt":"2026-02-01T04:27:59","guid":{"rendered":"https:\/\/mofei-lab.site\/?p=268"},"modified":"2026-02-26T18:07:05","modified_gmt":"2026-02-26T10:07:05","slug":"%e6%96%b0%e5%9e%8b%e6%99%b6%e4%bd%93%e7%ae%a1%e7%9a%84%e7%b4%a7%e5%87%91%e6%a8%a1%e5%9e%8b","status":"publish","type":"post","link":"https:\/\/mofei-lab.site\/en\/2026\/02\/01\/%e6%96%b0%e5%9e%8b%e6%99%b6%e4%bd%93%e7%ae%a1%e7%9a%84%e7%b4%a7%e5%87%91%e6%a8%a1%e5%9e%8b\/","title":{"rendered":"Compact Modeling of Novel Transistors"},"content":{"rendered":"

\u5728\u96c6\u6210\u7535\u8def\u8bbe\u8ba1\u4e2d\uff0c\u7535\u5b50\u8bbe\u8ba1\u81ea\u52a8\u5316\uff08EDA\uff09\u5de5\u5177\u7684\u7cbe\u5ea6\u9ad8\u5ea6\u4f9d\u8d56\u5e95\u5c42\u5668\u4ef6\u6a21\u578b\u3002\u968f\u7740\u5de5\u827a\u8282\u70b9\u8fc8\u5165\u4e9a\u7eb3\u7c73\u5c3a\u5ea6\uff0c\u4f20\u7edfMOSFET\u6a21\u578b\uff08\u5982BSIM\u7cfb\u5217\uff09\u5728\u63cf\u8ff0\u975e\u7845\u6750\u6599\u4e0e\u65b0\u578b\u7ed3\u6784\u5668\u4ef6\u65f6\u9010\u6e10\u53d7\u9650\u3002\u7d27\u51d1\u6a21\u578b\uff08Compact Model\uff09\u65e8\u5728\u6784\u5efa\u517c\u5177\u7269\u7406\u51c6\u786e\u6027\u4e0e\u8ba1\u7b97\u9ad8\u6548\u6027\u7684\u6570\u5b66\u8868\u8fbe\uff0c\u5728\u7edf\u4e00\u6846\u67b6\u4e0b\u523b\u753b\u91cf\u5b50\u6548\u5e94\u3001\u975e\u51c6\u9759\u6001\u884c\u4e3a\u53ca\u77ed\u6c9f\u9053\u6548\u5e94\u7b49\u5173\u952e\u7269\u7406\u673a\u5236\uff0c\u4ece\u800c\u652f\u6491\u7531\u6d77\u91cf\u65b0\u578b\u6676\u4f53\u7ba1\u6784\u6210\u7684\u590d\u6742\u7535\u8def\u7cfb\u7edf\u7ea7\u4eff\u771f\u4e0e\u4f18\u5316\u8bbe\u8ba1\u3002<\/p>\n\n\n\n

\u9762\u5411\u540e\u6469\u5c14\u65f6\u4ee3\u65b0\u578b\u5b58\u50a8\u4e0e\u4e09\u7ef4\u96c6\u6210\u9700\u6c42\uff0c\u672c\u65b9\u5411\u805a\u7126\u4e8e\u6c27\u5316\u7269\u534a\u5bfc\u4f53\uff08\u5982IGZO\uff09\u53ca\u94c1\u7535\u6676\u4f53\u7ba1\u7b49\u65b0\u578b\u5668\u4ef6\u7684\u7269\u7406\u673a\u5236\u5efa\u6a21\u4e0e\u7535\u8def\u7ea7\u5e94\u7528\u62d3\u5c55\uff0c\u6784\u5efa\u9762\u5411\u4e9a\u9608\u503c\u533a\u4e0e\u8d85\u4f4e\u6f0f\u7535\u7279\u6027\u7684\u7269\u7406\u9a71\u52a8\u578b\u7d27\u51d1\u6a21\u578b\u6846\u67b6\u3002\u7814\u7a76\u5185\u5bb9\u6db5\u76d6\u8017\u5c3d\u533a\u7535\u8377\u8c03\u63a7\u673a\u5236\u3001\u77ed\u6c9f\u9053\u6548\u5e94\u3001\u591a\u7269\u7406\u573a\u8026\u5408\u5f71\u54cd\u53ca\u5de5\u827a\u6ce2\u52a8\u7edf\u8ba1\u5efa\u6a21\u7b49\u5173\u952e\u95ee\u9898\uff0c\u5f62\u6210\u53ef\u5d4c\u5165SPICE\u5e73\u53f0\u7684\u6807\u51c6\u5316\u6a21\u578b\u4f53\u7cfb\uff0c\u4e3aFeFET\u30012T0C DRAM\u53ca\u5355\u7247\u4e09\u7ef4\u96c6\u6210\u5b58\u50a8\u7535\u8def\u7684\u5927\u89c4\u6a21\u8bbe\u8ba1\u4e0e\u4f18\u5316\u63d0\u4f9b\u7406\u8bba\u4e0e\u5de5\u5177\u652f\u6491\u3002<\/p>\n\n\n\n

\"\"<\/figure>\n\n\n\n

\u5728IGZO FET \u7d27\u51d1\u6a21\u578b\u4e0e TCAD \u7684\u8ba1\u7b97\u7ed3\u679c<\/p>\n\n\n\n

\u8bfe\u9898\u7ec4\u4fa7\u91cd\u70b9\u4e0e\u4f18\u52bf<\/h3>\n\n\n\n

\u5df2\u53d6\u5f97\u7684\u7814\u7a76\u8fdb\u5c55<\/h3>\n\n\n\n

\u53c2\u8003\u6587\u732e<\/h3>\n\n\n\n

1.X. Wang\u00a0et al<\/em>., “A Physics-Based Compact Model for IGZO Channel FET Toward Subthreshold Characteristic Dependent Memory Application,” in\u00a0IEEE Transactions on Electron Devices<\/em>, vol. 72, no. 5, pp. 2390-2398, May 2025, doi: 10.1109\/TED.2025.3549745. keywords: {Electrons;Integrated circuit modeling;Numerical<\/p>\n\n\n\n

2.R. J. Trew, “A zone-based approach for physics-based FET compact models,”\u00a02016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)<\/em>, Krakow, Poland, 2016, pp. 1-4, doi: 10.1109\/MIKON.2016.7491948.<\/p>\n\n\n\n

3.N. Feng\u00a0et al<\/em>., “A Physics-Based Dynamic Compact Model of Ferroelectric Tunnel Junctions,” in\u00a0IEEE Electron Device Letters<\/em>, vol. 44, no. 2, pp. 261-264, Feb. 2023, doi: 10.1109\/LED.2022.3233456.\u00a0<\/p>","protected":false},"excerpt":{"rendered":"

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