期刊：

【1】（IEEE TED，2025）X. Wang et al., “A Physics-Based Compact Model for IGZO Channel FET Toward Subthreshold Characteristic Dependent Memory Application,” in IEEE Transactions on Electron Devices, vol. 72, no. 5, pp. 2390-2398, May 2025, doi: 10.1109/TED.2025.3549745.

会议：

【3】（EDTM 2026，马来西亚 槟城）
【2】（SSDM 2025，日本 横滨）X. Wang, Zhuo Li, Guanhua Yang, Masaharu Kobayashi, Fei Mo, Yeliang Wang, “Physical Modeling of Oxide-Semiconductor-Channel FeFETs for Content Addressable Memory Circuit Simulation,” 2025 International Conference on Solid State Devices and Materials, Yokohama, Japan, 2025, B-2-03.
【1】（ICSICT 2024，中国 珠海）X. Wang et al., “A Simulation Comparison of Channel-All-Around and Gate-All-Around 3D Vertical Structure FeFET with IGZO Channel,” 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), Zhuhai, China, 2024, pp. 1-3, doi: 10.1109/ICSICT62049.2024.10830976.

获奖：

[2] 2025 CAD-TFT会议 最佳海报奖 （获奖人：郭志坚 博士研究生）

[1] 2025 “华为杯”第八届中国研究生创“芯”大赛 团队优秀奖 （队长：王学彬 博士研究生，队员：王政霖 硕士研究生；指导教师：莫非）