Journal Papers：

【1】（IEEE TED，2025）X. Wang et al., “A Physics-Based Compact Model for IGZO Channel FET Toward Subthreshold Characteristic Dependent Memory Application,” in IEEE Transactions on Electron Devices, vol. 72, no. 5, pp. 2390-2398, May 2025, doi: 10.1109/TED.2025.3549745.

Conference Papers：

【3】(EDTM 2026, Penang, Malaysia) Z. Guo, G. Yang, F. Mo, Y. Wang., Simulation study of IGZO (with CuOx)/Si Complementary Ferroelectric FET (CFeFET) for Multi-bit Content Addressable Memory, in 2026 10th IEEE Electron Devices Technology & Manufacturing Conference.
【2】 (SSDM 2025, Yokohama, Japan) X. Wang, Zhuo Li, Guanhua Yang, Masaharu Kobayashi, Fei Mo, Yeliang Wang, “Physical Modeling of Oxide-Semiconductor-Channel FeFETs for Content Addressable Memory Circuit Simulation,” 2025 International Conference on Solid State Devices and Materials, Yokohama, Japan, 2025, B-2-03.
【1】 (ICSICT 2024, Zhuhai, China) X. Wang et al., “A Simulation Comparison of Channel-All-Around and Gate-All-Around 3D Vertical Structure FeFET with IGZO Channel,” *2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)*, Zhuhai, China, 2024, pp. 1–3, doi: 10.1109/ICSICT62049.2024.10830976.

Awarded:

[2] Best Poster Award at the 2025 CAD-TFT Conference (Awardee: Zhi-jian Guo, Doctoral Candidate)

[1] 2025 "Huawei Cup" 8th China Graduate Student Integrated Circuit Innovation Competition Team Excellence Award (Team Leader: Xue-bin Wang, Doctoral Candidate; Team Member: Zheng-lin Wang, Master's Student; Advisor: Fei Mo)